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国際会議招待講演

  • H. Hirayama, “Development of 230nm Far-UVC LED panel for application to human-safe virus inactivation”, 20th International Conference Laser Optics (ICLO 2022), St. Petersburg, Russia, On-line, June 21, 2022.
  • 【Plenary Talk】H. Hirayama, “Progress of deep-UV LEDs by increasing light-extraction efficiency”, The 5th International Workshop on Ultraviolet Materials and Devices (IWUMD 2022), Jeju, Korea, May 24, 2022.
  • T. T. Lin, L. Wang, K. Wang, T. Grange, S. Birner, and H. Hirayama, “Over 1 watt THz QCLs with high doping concentration and variable Al composition in active structure”, CLEO Laser Science to Photonic Application, San Jose, California, May 15, 2022.

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国内会議招待講演

  • 平山秀樹、「ポストコロナ社会に期待される深紫外LED」、ラドテック研究会、2022年8月23-26日
  • 鹿嶋行雄：“UVC-LED高効率化の現状と最新応用例”，Optics & Photonics International Exhibition (OPIE’ 22) 紫外線応用技術セミナー，パシフィコ横浜，2022年4月20日.
  • 平山秀樹：“コロナ社会に期待される深紫外線”，Optics & Photonics International Exhibition (OPIE’ 22) 紫外線応用技術セミナー，パシフィコ横浜，2022年4月20日.

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発表論文

  • T. T. Lin, L. Wang, K. Wang, T. Grange, S. Birner, and H. Hirayama, “Over one watt output power terahertz quantum cascade lasers by using high doping concentration and variable barrier-well height”, physica status solidi rrl, 15year of pss RRL, pp. 2200033, May 20, 2022. 10.1002/pssr.202200033
  • L. Wang, T. T. Lin, K. Wang, and H. Hirayama, “Limitation of parasitic absorption in designs of three-state terahertz quantum cascade lasers with direct-phonon injection”, Applied Physics Express, Vol. 15, No. 5, pp. 052002, April 22, 2022. 10.35848/1882-0786/ac4e26

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解説・総説

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国際会議

  • L. Wang, T. T. Lin, T. Grange, K. Wang, M. X. Chen, and H. Hirayama, “Optical gain in terahertz quantum cascade lasers based on wide-bandgap semiconductor quantum structures ZnO/ZnMgO”, The International Workshop on Nitride Semiconductors (IWN 2022), Berlin, Germany, October 9-14, 2022.
  • N. Maeda, Y. Kashima, E.Matsuura, Y. Iwaisako, and H. Hirayama, “Remarkable increase of injection efficiency in AlGaN far-UV LEDs and UVB LDs using polarization doped p-layers activated by remote accepter”, The International Workshop on Nitride Semiconductors (IWN 2022), Berlin, Germany, October 9-14, 2022.
  • N. Maeda, Y. Kashima, E. Matsuura, Y. Iwaisako, and H. Hirayama, “232 nm AlGaN far-UV LED with 0.53% EQE and 3.2 mW power developed by polarization doped transparent p-contact layer”, The International Workshop on Nitride Semiconductors (IWN 2022), Berlin, Germany, October 9-14, 2022.
  • T. Miyagawa, T. Atsushi, S. Tsuda, H. Hirayama, Y. Takashima, Y. Naoi, and K. Nagamatsu, “Dependence of c-plane sapphire misorientation angle in high temperature AlN growth and specific step bunching at large angle”, The International Workshop on Nitride Semiconductors (IWN 2022), Berlin, Germany, October 9-14, 2022.
  • T. Miyagawa, T. Atsushi, H. Hirayama, Y. Takashima, Y. Naoi, and K. Nagamatsu, “Lateral epitaxial overgrowth by mass transport in AlN with the temperature of 1700℃”, The International Workshop on Nitride Semiconductors (IWN 2022), Berlin, Germany, October 9-14, 2022.
  • A. Tomita, S. Tsuda, T. Miyagawa, H. Hirayama, Y. Takashima, Y. Naoi, and K. Nagamatsu, “The dependence of the V/III ratio in high-temperature AlN growth with several misorientations off-angle sapphire substrates”, The International Workshop on Nitride Semiconductors (IWN 2022), Berlin, Germany, October 9-14, 2022.
  • K. Nagamatsu, T. Miyagawa, A. Tomita, H. Hirayama, Y. Takashima, and Y. Naoi, “The high-temperature growth in AlN with the unaffected parasitic reaction by Jet gas stream MOVPE”, The International Workshop on Nitride Semiconductors (IWN 2022), Berlin, Germany, October 9-14, 2022.
  • N. Maeda, M. A. Khan, and H. Hirayama, “Marked increase in injection efficiency of 290 nm AlGaN deep-UV LD structure using electron blocking layer and polarization doped cladding layer”, The 20th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XX), Stuttgart, Germany, July 10-14, 2022.
  • N. Maeda, Y. Kashima, E. Matsuura, Y. Iwaisako, and H. Hirayama, “Increasing the efficiency of 230 nm band AlGaN Far-UV LEDs using transparent p-AlGaN contact layer and reflective p-electrode”, The 20th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XX), Stuttgart, Germany, July 10-14, 2022.
  • Y. Itokazu, N. Maeda, H. Yaguchi, and H. Hirayama, “Simulation of injection efficiency and net modal gain in 250-300 nm AlGaN deep-UV laser diodes”, The 20th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XX), Stuttgart, Germany, July 10-14, 2022.
  • Y. Kashima, E. Matsuura, M. Jo, N. Maeda, H. Shinohara, K. Furuta, Y. Osada, R. Kamimura, Y. Aoyama, T. Iwai, T. Nagano, H. Oogami, Y. Iwaisako, and H. Hirayama, “Trial production of reflective photonic crystals formed in p-GaN contact layer of 230nm UVC-LED”, The 20th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XX), Stuttgart, Germany, July 10-14, 2022.
  • H. Hirayama, H. Oogami, K. Mouri, Y. Iwaisako, Y. Kashima, E. Matsuura, M. Jo, N. Maeda, K. Iimura, H. Shinohara, K. Furuta, Y. Osada, R. Kamimura, Y. Aoyama, T. Iwai, and T. Nagano, “Demonstration of 10 mW class 230 nm AlGaN far-UV LED panel”, The 20th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XX), Stuttgart, Germany, July 10-14, 2022.
  • N. Maeda, Y. Kashima, E. Matsuura, Y. Iwaisako, and H. Hirayama, “Over 0.5% EQE and 3 mW power 232 nm AlGaN Far-UV LED using polarization doped transparent p-AlGaN contact layer”, The 20th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XX), Stuttgart, Germany, July 10-14, 2022.
  • M. A. Khan, M. Maeda, M. Jo, K. Iimura, and H. Hirayama, “Low operating voltages as well as low efficiency droop in AlGaN UVB LED without using conventional electron blocking mechanism”, The 20th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XX), Stuttgart, Germany, July 10-14, 2022.
  • M. Ajmal Khan, E. Matsuura, Y. Kashima, M. Maeda, M. Jo, K. Iimura, and H. Hirayama, “Remarkable light extraction enhancement in 304nm band AlGaN UVB LED via engineering of nanoPSS and photonic crystal in p AlGaN contact layer”, The 5th International Workshop on Ultraviolet Materials and Devices (IWUMD 2022), Jeju, Korea, May 25, 2022.

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国内会議・研究会